منابع مشابه
Pechmann reaction promoted by boron trifluoride dihydrate.
The Pechmann reaction of substituted phenols 1a-e with methyl acetoacetate (2) can be activated by boron trifluoride dihydrate (3) to give the corresponding 4-methyl- coumarin derivatives 4a-e in excellent yield (98-99 %).
متن کاملEffect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si1 xGex
This paper studies how boron transient enhanced diffusion (TED) and boron thermal diffusion in Si1 Ge are influenced by a high-energy fluorine implant at a dose in the range 5 10 14 cm 2 to 1 10 cm . Secondary ion mass spectroscopy (SIMS) profiles of boron marker layers are presented for different fluorine doses and compared with fluorine SIMS profiles and transmission electron microscopy (TEM)...
متن کاملBoron trifluoride-methanol complex as a non-depurinating detritylating agent in DNA synthesis.
We have found that boron trifluoride-methanol complex (BTMC) is an effective non-depurinating detritylating agent in automated DNA synthesis. Dichloroacetic acid (DCA) is at present widely used for the deprotection of the 5'-hydroxyl group prior to coupling the next nucleotide (1); however, the protected purine bases, 6'-isobutyryl-2'-deoxyguanosine and 4'-benzoyl-2'-deoxyadenosine, are unstabl...
متن کاملThe Heat of Formation of Boron Trifluoride by Direct Combination of the Elements
An accurate value for the heat of formation of boron trifluoride is of significant importance because this value is involved in the thermochemistry of many boron compounds. The study of the thermochemistry of boron compounds was for a long time hampered by difficulties in measuring a suitable reaction involving elemental boron. The heat of formation of boric oxide, for instance, was uncertain t...
متن کاملAthermal, Photonic Effects on Boron Diffusion and Activation in Silicon during Microwave Rapid Thermal Annealing
Fabrication of sub-micron silicon integrated circuits (IC’s) requires ultra-shallow, high-dose ion implantation of dopant atoms, e.g., boron, followed by a rapid, high-temperature anneal. Since the implantation process damages the crystal lattice structure, the anneal is expected to repair this damage and react the implanted B atoms into Si lattice sites while minimizing inward diffusion of the...
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ژورنال
عنوان ژورنال: Physical Review
سال: 1947
ISSN: 0031-899X
DOI: 10.1103/physrev.71.887